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PSMN1R6-40YLC,115

PSMN1R6-40YLC,115

For Reference Only

Part Number PSMN1R6-40YLC,115
PNEDA Part # PSMN1R6-40YLC-115
Description MOSFET N-CH 40V 100A LFPAK-SO8
Manufacturer Nexperia
Unit Price Request a Quote
In Stock 2,664
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PSMN1R6-40YLC Resources

Brand Nexperia
ECAD Module ECAD
Mfr. Part NumberPSMN1R6-40YLC,115
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
PSMN1R6-40YLC, PSMN1R6-40YLC Datasheet (Total Pages: 14, Size: 738.95 KB)
PDFPSMN1R6-40YLC:115 Datasheet Cover
PSMN1R6-40YLC:115 Datasheet Page 2 PSMN1R6-40YLC:115 Datasheet Page 3 PSMN1R6-40YLC:115 Datasheet Page 4 PSMN1R6-40YLC:115 Datasheet Page 5 PSMN1R6-40YLC:115 Datasheet Page 6 PSMN1R6-40YLC:115 Datasheet Page 7 PSMN1R6-40YLC:115 Datasheet Page 8 PSMN1R6-40YLC:115 Datasheet Page 9 PSMN1R6-40YLC:115 Datasheet Page 10 PSMN1R6-40YLC:115 Datasheet Page 11

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PSMN1R6-40YLC Specifications

ManufacturerNexperia USA Inc.
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.55mOhm @ 25A, 10V
Vgs(th) (Max) @ Id1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs126nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7790pF @ 20V
FET Feature-
Power Dissipation (Max)288W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK56, Power-SO8
Package / CaseSOT-1023, 4-LFPAK

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