PSMN1R6-40YLC:115 Datasheet
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Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.55mOhm @ 25A, 10V Vgs(th) (Max) @ Id 1.95V @ 1mA Gate Charge (Qg) (Max) @ Vgs 126nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7790pF @ 20V FET Feature - Power Dissipation (Max) 288W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK56, Power-SO8 Package / Case SOT-1023, 4-LFPAK |
Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.55mOhm @ 25A, 10V Vgs(th) (Max) @ Id 1.95V @ 1mA Gate Charge (Qg) (Max) @ Vgs 126nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7790pF @ 20V FET Feature - Power Dissipation (Max) 288W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK56, Power-SO8 Package / Case SOT-1023, 4-LFPAK |
