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PMV130ENEA/DG/B2R

PMV130ENEA/DG/B2R

For Reference Only

Part Number PMV130ENEA/DG/B2R
PNEDA Part # PMV130ENEA-DG-B2R
Description MOSFET N-CH 40V 2.1A TO236AB
Manufacturer Nexperia
Unit Price Request a Quote
In Stock 3,906
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PMV130ENEA/DG/B2R Resources

Brand Nexperia
ECAD Module ECAD
Mfr. Part NumberPMV130ENEA/DG/B2R
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
PMV130ENEA/DG/B2R, PMV130ENEA/DG/B2R Datasheet (Total Pages: 16, Size: 711.04 KB)
PDFPMV130ENEA/DG/B2R Datasheet Cover
PMV130ENEA/DG/B2R Datasheet Page 2 PMV130ENEA/DG/B2R Datasheet Page 3 PMV130ENEA/DG/B2R Datasheet Page 4 PMV130ENEA/DG/B2R Datasheet Page 5 PMV130ENEA/DG/B2R Datasheet Page 6 PMV130ENEA/DG/B2R Datasheet Page 7 PMV130ENEA/DG/B2R Datasheet Page 8 PMV130ENEA/DG/B2R Datasheet Page 9 PMV130ENEA/DG/B2R Datasheet Page 10 PMV130ENEA/DG/B2R Datasheet Page 11

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PMV130ENEA/DG/B2R Specifications

ManufacturerNexperia USA Inc.
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs120mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds170pF @ 20V
FET Feature-
Power Dissipation (Max)5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-236AB
Package / CaseTO-236-3, SC-59, SOT-23-3

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