Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NVTFS5116PLWFTWG

NVTFS5116PLWFTWG

For Reference Only

Part Number NVTFS5116PLWFTWG
PNEDA Part # NVTFS5116PLWFTWG
Description MOSFET P-CH 60V 14A U8FL
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,658
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 19 - Feb 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVTFS5116PLWFTWG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVTFS5116PLWFTWG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVTFS5116PLWFTWG, NVTFS5116PLWFTWG Datasheet (Total Pages: 7, Size: 195.1 KB)
PDFNVTFS5116PLWFTWG Datasheet Cover
NVTFS5116PLWFTWG Datasheet Page 2 NVTFS5116PLWFTWG Datasheet Page 3 NVTFS5116PLWFTWG Datasheet Page 4 NVTFS5116PLWFTWG Datasheet Page 5 NVTFS5116PLWFTWG Datasheet Page 6 NVTFS5116PLWFTWG Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NVTFS5116PLWFTWG Datasheet
  • where to find NVTFS5116PLWFTWG
  • ON Semiconductor

  • ON Semiconductor NVTFS5116PLWFTWG
  • NVTFS5116PLWFTWG PDF Datasheet
  • NVTFS5116PLWFTWG Stock

  • NVTFS5116PLWFTWG Pinout
  • Datasheet NVTFS5116PLWFTWG
  • NVTFS5116PLWFTWG Supplier

  • ON Semiconductor Distributor
  • NVTFS5116PLWFTWG Price
  • NVTFS5116PLWFTWG Distributor

NVTFS5116PLWFTWG Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs52mOhm @ 7A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1258pF @ 25V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 21W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-WDFN (3.3x3.3)
Package / Case8-PowerWDFN

The Products You May Be Interested In

APT17F80B

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

580mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

122nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3757pF @ 25V

FET Feature

-

Power Dissipation (Max)

500W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 [B]

Package / Case

TO-247-3

IRL3716

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4mOhm @ 90A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

79nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5090pF @ 10V

FET Feature

-

Power Dissipation (Max)

210W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IRFU3708PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

61A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.8V, 10V

Rds On (Max) @ Id, Vgs

12.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

24nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

2417pF @ 15V

FET Feature

-

Power Dissipation (Max)

87W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK (TO-251)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

BSS138-TP

Micro Commercial Co

Manufacturer

Micro Commercial Co

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

220mA

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.5Ohm @ 220mA, 10V

Vgs(th) (Max) @ Id

1.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

60pF @ 25V

FET Feature

-

Power Dissipation (Max)

350mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

AUIRF2807

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13mOhm @ 43A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

160nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3820pF @ 25V

FET Feature

-

Power Dissipation (Max)

230W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

HD64F3664FPV

HD64F3664FPV

Renesas Electronics America

IC MCU 16BIT 32KB FLASH 64LQFP

PIC12F629-I/SN

PIC12F629-I/SN

Microchip Technology

IC MCU 8BIT 1.75KB FLASH 8SOIC

MAX6675ISA+T

MAX6675ISA+T

Maxim Integrated

IC THERMOCOUP TO DGTL 8-SOIC

EPM1270F256C5N

EPM1270F256C5N

Intel

IC CPLD 980MC 6.2NS 256FBGA

7M24000020

7M24000020

TXC

CRYSTAL 24MHZ 18PF SMD

L7924CV

L7924CV

STMicroelectronics

IC REG LINEAR -24V 1.5A TO220AB

MMBT3904LT1G

MMBT3904LT1G

ON Semiconductor

TRANS NPN 40V 0.2A SOT23

HCPL-060L-000E

HCPL-060L-000E

Broadcom

OPTOISO 3.75KV OPN COLLECTOR 8SO

EKXG401ELL820MM25S

EKXG401ELL820MM25S

United Chemi-Con

CAP ALUM 82UF 20% 400V RADIAL

24LC256-I/ST

24LC256-I/ST

Microchip Technology

IC EEPROM 256K I2C 8TSSOP

PIC18F1230-I/SO

PIC18F1230-I/SO

Microchip Technology

IC MCU 8BIT 4KB FLASH 18SOIC

ADM3202ARN

ADM3202ARN

Analog Devices

IC TRANSCEIVER FULL 2/2 16SOIC