Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

APT17F80B

APT17F80B

For Reference Only

Part Number APT17F80B
PNEDA Part # APT17F80B
Description MOSFET N-CH 800V 18A TO-247
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 6,210
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 19 - Apr 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT17F80B Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT17F80B
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • APT17F80B Datasheet
  • where to find APT17F80B
  • Microsemi

  • Microsemi APT17F80B
  • APT17F80B PDF Datasheet
  • APT17F80B Stock

  • APT17F80B Pinout
  • Datasheet APT17F80B
  • APT17F80B Supplier

  • Microsemi Distributor
  • APT17F80B Price
  • APT17F80B Distributor

APT17F80B Specifications

ManufacturerMicrosemi Corporation
SeriesPOWER MOS 8™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs580mOhm @ 9A, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs122nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3757pF @ 25V
FET Feature-
Power Dissipation (Max)500W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 [B]
Package / CaseTO-247-3

The Products You May Be Interested In

IRF6616

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

19A (Ta), 106A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5mOhm @ 19A, 10V

Vgs(th) (Max) @ Id

2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3765pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta), 89W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MX

Package / Case

DirectFET™ Isometric MX

SPB80N03S2L-04 G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.9mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

2V @ 130µA

Gate Charge (Qg) (Max) @ Vgs

105nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3900pF @ 25V

FET Feature

-

Power Dissipation (Max)

188W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

TSM60NB041PW C1G

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

78A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

41mOhm @ 21.7A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

139nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

6120pF @ 100V

FET Feature

-

Power Dissipation (Max)

446W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

AUIRLS3034-7P

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

240A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.4mOhm @ 200A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

180nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10990pF @ 40V

FET Feature

-

Power Dissipation (Max)

380W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK (7-Lead)

Package / Case

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

IRFU12N25D

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

260mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

810pF @ 25V

FET Feature

-

Power Dissipation (Max)

144W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK (TO-251)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Recently Sold

EPC2045ENGRT

EPC2045ENGRT

EPC

GANFET TRANS 100V BUMPED DIE

FMMT718TA

FMMT718TA

Diodes Incorporated

TRANS PNP 20V 1.5A SOT23-3

ATTINY841-SSU

ATTINY841-SSU

Microchip Technology

IC MCU 8BIT 8KB FLASH 14SOIC

ADG506AKR

ADG506AKR

Analog Devices

IC MULTIPLEXER 16X1 28SOIC

DS5000FP-16+

DS5000FP-16+

Maxim Integrated

IC MCU 8BIT EXTRNL NVSRAM 80QFP

MPZ1608S221ATA00

MPZ1608S221ATA00

TDK

FERRITE BEAD 220 OHM 0603 1LN

MIC5235-3.3YM5-TR

MIC5235-3.3YM5-TR

Microchip Technology

IC REG LINEAR 3.3V 150MA SOT23-5

MC33990D

MC33990D

NXP

IC TRANSCEIVER HALF 1/1 8SOIC

DLW5BTN501SQ2L

DLW5BTN501SQ2L

Murata

CMC 4A 2LN 500 OHM SMD

NFE31PT220R1E9L

NFE31PT220R1E9L

Murata

FILTER LC(T) 22PF SMD

F55J25R

F55J25R

Ohmite

RES CHAS MNT 25 OHM 5% 55W

LT8640EUDC#TRPBF

LT8640EUDC#TRPBF

Linear Technology/Analog Devices

IC REG BUCK ADJUSTABLE 5A 20QFN