Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NVTFS4C13NWFTWG

NVTFS4C13NWFTWG

For Reference Only

Part Number NVTFS4C13NWFTWG
PNEDA Part # NVTFS4C13NWFTWG
Description MOSFET N-CH 30V 40A U8FL
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,424
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVTFS4C13NWFTWG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVTFS4C13NWFTWG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVTFS4C13NWFTWG, NVTFS4C13NWFTWG Datasheet (Total Pages: 6, Size: 138.31 KB)
PDFNVTFS4C13NWFTAG Datasheet Cover
NVTFS4C13NWFTAG Datasheet Page 2 NVTFS4C13NWFTAG Datasheet Page 3 NVTFS4C13NWFTAG Datasheet Page 4 NVTFS4C13NWFTAG Datasheet Page 5 NVTFS4C13NWFTAG Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NVTFS4C13NWFTWG Datasheet
  • where to find NVTFS4C13NWFTWG
  • ON Semiconductor

  • ON Semiconductor NVTFS4C13NWFTWG
  • NVTFS4C13NWFTWG PDF Datasheet
  • NVTFS4C13NWFTWG Stock

  • NVTFS4C13NWFTWG Pinout
  • Datasheet NVTFS4C13NWFTWG
  • NVTFS4C13NWFTWG Supplier

  • ON Semiconductor Distributor
  • NVTFS4C13NWFTWG Price
  • NVTFS4C13NWFTWG Distributor

NVTFS4C13NWFTWG Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C14A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15.2nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds770pF @ 15V
FET Feature-
Power Dissipation (Max)3W (Ta), 26W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-WDFN (3.3x3.3)
Package / Case8-PowerWDFN

The Products You May Be Interested In

5LN01M-TL-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

100mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4V

Rds On (Max) @ Id, Vgs

7.8Ohm @ 50mA, 4V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

1.57nC @ 10V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

6.6pF @ 10V

FET Feature

-

Power Dissipation (Max)

150mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-MCP

Package / Case

SC-70, SOT-323

IRFH5303TR2PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

23A (Ta), 82A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.2mOhm @ 49A, 10V

Vgs(th) (Max) @ Id

2.35V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

41nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2190pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.6W (Ta), 46W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (5x6)

Package / Case

8-PowerVDFN

NTMFS4C50NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

TPCA8052-H(TE12LQM

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVI-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

20A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11.3mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.3V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2110pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta), 30W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP Advance (5x5)

Package / Case

8-PowerVDFN

Manufacturer

IXYS

Series

Linear L2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

610nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

24000pF @ 25V

FET Feature

-

Power Dissipation (Max)

960W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS247™-3

Package / Case

TO-247-3

Recently Sold

XC7A75T-2FGG676I

XC7A75T-2FGG676I

Xilinx

IC FPGA 300 I/O 676FBGA

LTC3676HUJ-1#TRPBF

LTC3676HUJ-1#TRPBF

Linear Technology/Analog Devices

IC REG CONV I.MX6 7OUT 40QFN

ADF4360-7BCPZRL7

ADF4360-7BCPZRL7

Analog Devices

IC SYNTHESIZER VCO 24LFCSP

IRF7853PBF

IRF7853PBF

Infineon Technologies

MOSFET N-CH 100V 8.3A 8-SOIC

ATMEGA32A-AU

ATMEGA32A-AU

Microchip Technology

IC MCU 8BIT 32KB FLASH 44TQFP

DS3231SN#T&R

DS3231SN#T&R

Maxim Integrated

IC RTC CLK/CALENDAR I2C 16-SOIC

DLW5BSN191SQ2L

DLW5BSN191SQ2L

Murata

CMC 5A 2LN 190 OHM SMD

ABM8G-24.000MHZ-18-D2Y-T

ABM8G-24.000MHZ-18-D2Y-T

Abracon

CRYSTAL 24.0000MHZ 18PF SMD

CY90F543GPF-GE1

CY90F543GPF-GE1

Cypress Semiconductor

IC MCU 16BIT 128KB FLASH 100QFP

SMAJ33CA

SMAJ33CA

Bourns

TVS DIODE 33V 53.3V SMA

BK/HTB-42I-R

BK/HTB-42I-R

Eaton - Electronics Division

FUSE HLDR CART 250V 20A PNL MNT

FDS4435BZ

FDS4435BZ

ON Semiconductor

MOSFET P-CH 30V 8.8A 8-SOIC