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PHK4NQ20T,518

PHK4NQ20T,518

For Reference Only

Part Number PHK4NQ20T,518
PNEDA Part # PHK4NQ20T-518
Description MOSFET N-CH 200V 4A SOT96-1
Manufacturer NXP
Unit Price Request a Quote
In Stock 7,038
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PHK4NQ20T Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberPHK4NQ20T,518
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
PHK4NQ20T, PHK4NQ20T Datasheet (Total Pages: 12, Size: 233.85 KB)
PDFPHK4NQ20T Datasheet Cover
PHK4NQ20T Datasheet Page 2 PHK4NQ20T Datasheet Page 3 PHK4NQ20T Datasheet Page 4 PHK4NQ20T Datasheet Page 5 PHK4NQ20T Datasheet Page 6 PHK4NQ20T Datasheet Page 7 PHK4NQ20T Datasheet Page 8 PHK4NQ20T Datasheet Page 9 PHK4NQ20T Datasheet Page 10 PHK4NQ20T Datasheet Page 11

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PHK4NQ20T Specifications

ManufacturerNXP USA Inc.
SeriesTrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs130mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1230pF @ 25V
FET Feature-
Power Dissipation (Max)6.25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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