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NVMFS4C302NT1G

NVMFS4C302NT1G

For Reference Only

Part Number NVMFS4C302NT1G
PNEDA Part # NVMFS4C302NT1G
Description NFET SO8FL 30V 1.15MO
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,646
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVMFS4C302NT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVMFS4C302NT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVMFS4C302NT1G, NVMFS4C302NT1G Datasheet (Total Pages: 7, Size: 124.86 KB)
PDFNVMFS4C302NWFT1G Datasheet Cover
NVMFS4C302NWFT1G Datasheet Page 2 NVMFS4C302NWFT1G Datasheet Page 3 NVMFS4C302NWFT1G Datasheet Page 4 NVMFS4C302NWFT1G Datasheet Page 5 NVMFS4C302NWFT1G Datasheet Page 6 NVMFS4C302NWFT1G Datasheet Page 7

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NVMFS4C302NT1G Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C43A (Ta), 241A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.15mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs82nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5780pF @ 15V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 115W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN, 5 Leads

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