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NVF6P02T3G

NVF6P02T3G

For Reference Only

Part Number NVF6P02T3G
PNEDA Part # NVF6P02T3G
Description MOSFET P-CH 20V 10A SOT-223
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,190
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVF6P02T3G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVF6P02T3G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVF6P02T3G, NVF6P02T3G Datasheet (Total Pages: 7, Size: 132.89 KB)
PDFNVF6P02T3G Datasheet Cover
NVF6P02T3G Datasheet Page 2 NVF6P02T3G Datasheet Page 3 NVF6P02T3G Datasheet Page 4 NVF6P02T3G Datasheet Page 5 NVF6P02T3G Datasheet Page 6 NVF6P02T3G Datasheet Page 7

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NVF6P02T3G Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs50mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 16V
FET Feature-
Power Dissipation (Max)8.3W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223 (TO-261)
Package / CaseTO-261-4, TO-261AA

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