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NVB5860NLT4G

NVB5860NLT4G

For Reference Only

Part Number NVB5860NLT4G
PNEDA Part # NVB5860NLT4G
Description MOSFET N-CH 60V 169A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,898
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVB5860NLT4G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVB5860NLT4G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVB5860NLT4G, NVB5860NLT4G Datasheet (Total Pages: 7, Size: 116.58 KB)
PDFNVB5860NLT4G Datasheet Cover
NVB5860NLT4G Datasheet Page 2 NVB5860NLT4G Datasheet Page 3 NVB5860NLT4G Datasheet Page 4 NVB5860NLT4G Datasheet Page 5 NVB5860NLT4G Datasheet Page 6 NVB5860NLT4G Datasheet Page 7

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NVB5860NLT4G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C220A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs220nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds13216pF @ 25V
FET Feature-
Power Dissipation (Max)283W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK-3
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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