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NTMFS4H02NT1G

NTMFS4H02NT1G

For Reference Only

Part Number NTMFS4H02NT1G
PNEDA Part # NTMFS4H02NT1G
Description MOSFET N-CH 25V 37A SO8FL
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,964
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTMFS4H02NT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTMFS4H02NT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTMFS4H02NT1G, NTMFS4H02NT1G Datasheet (Total Pages: 8, Size: 88.7 KB)
PDFNTMFS4H02NT1G Datasheet Cover
NTMFS4H02NT1G Datasheet Page 2 NTMFS4H02NT1G Datasheet Page 3 NTMFS4H02NT1G Datasheet Page 4 NTMFS4H02NT1G Datasheet Page 5 NTMFS4H02NT1G Datasheet Page 6 NTMFS4H02NT1G Datasheet Page 7 NTMFS4H02NT1G Datasheet Page 8

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NTMFS4H02NT1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C37A (Ta), 193A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2651pF @ 12V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 83W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN

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