NTMFS4H02NT1G Datasheet
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 37A (Ta), 193A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.4mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 38.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2651pF @ 12V FET Feature - Power Dissipation (Max) 3.13W (Ta), 83W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 37A (Ta), 193A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.4mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 38.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2651pF @ 12V FET Feature - Power Dissipation (Max) 3.13W (Ta), 83W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |
