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NTLJS3A18PZTWG

NTLJS3A18PZTWG

For Reference Only

Part Number NTLJS3A18PZTWG
PNEDA Part # NTLJS3A18PZTWG
Description MOSFET P-CH 20V 8.4A WDFN6
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,462
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 21 - Apr 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTLJS3A18PZTWG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTLJS3A18PZTWG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTLJS3A18PZTWG, NTLJS3A18PZTWG Datasheet (Total Pages: 6, Size: 156.16 KB)
PDFNTLJS3A18PZTXG Datasheet Cover
NTLJS3A18PZTXG Datasheet Page 2 NTLJS3A18PZTXG Datasheet Page 3 NTLJS3A18PZTXG Datasheet Page 4 NTLJS3A18PZTXG Datasheet Page 5 NTLJS3A18PZTXG Datasheet Page 6

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NTLJS3A18PZTWG Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs18mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs28nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds2240pF @ 15V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-WDFN (2x2)
Package / Case6-WDFN Exposed Pad

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