NTHD4P02FT1G
For Reference Only
| Part Number | NTHD4P02FT1G |
| PNEDA Part # | NTHD4P02FT1G |
| Description | MOSFET P-CH 20V 2.2A CHIPFET |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,842 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
NTHD4P02FT1G Resources
| Brand | ON Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | NTHD4P02FT1G |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- NTHD4P02FT1G Datasheet
- where to find NTHD4P02FT1G
- ON Semiconductor
- ON Semiconductor NTHD4P02FT1G
- NTHD4P02FT1G PDF Datasheet
- NTHD4P02FT1G Stock
- NTHD4P02FT1G Pinout
- Datasheet NTHD4P02FT1G
- NTHD4P02FT1G Supplier
- ON Semiconductor Distributor
- NTHD4P02FT1G Price
- NTHD4P02FT1G Distributor
NTHD4P02FT1G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 2.2A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.1W (Tj) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | ChipFET™ |
| Package / Case | 8-SMD, Flat Lead |
The Products You May Be Interested In
|
Manufacturer Renesas Electronics America Series - FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.4mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs 168nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 10918pF @ 25V FET Feature - Power Dissipation (Max) 263W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer Microsemi Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 15A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 390mOhm @ 7A, 10V Vgs(th) (Max) @ Id 5V @ 500µA Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 25V FET Feature - Power Dissipation (Max) 223W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 [K] Package / Case TO-220-3 |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 3.9mOhm @ 50A, 10V Vgs(th) (Max) @ Id 3.8V @ 125µA Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 50V FET Feature - Power Dissipation (Max) 188W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
Manufacturer STMicroelectronics Series MDmesh™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 61A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 23mOhm @ 30.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 104nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 4329pF @ 50V FET Feature - Power Dissipation (Max) 190W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
