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NTGS1135PT1G

NTGS1135PT1G

For Reference Only

Part Number NTGS1135PT1G
PNEDA Part # NTGS1135PT1G
Description MOSFET P-CH 8V 4.6A 6-TSOP
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,644
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 19 - Feb 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTGS1135PT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTGS1135PT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTGS1135PT1G, NTGS1135PT1G Datasheet (Total Pages: 5, Size: 104.44 KB)
PDFNTGS1135PT1G Datasheet Cover
NTGS1135PT1G Datasheet Page 2 NTGS1135PT1G Datasheet Page 3 NTGS1135PT1G Datasheet Page 4 NTGS1135PT1G Datasheet Page 5

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NTGS1135PT1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs31mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs21nC @ 4.5V
Vgs (Max)±6V
Input Capacitance (Ciss) (Max) @ Vds2200pF @ 6V
FET Feature-
Power Dissipation (Max)970mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6

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