NTGS1135PT1G Datasheet
NTGS1135PT1G Datasheet
Total Pages: 5
Size: 104.44 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
NTGS1135PT1G
|
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 31mOhm @ 4.6A, 4.5V Vgs(th) (Max) @ Id 850mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V Vgs (Max) ±6V Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 6V FET Feature - Power Dissipation (Max) 970mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 |
