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NTD4302-1G

NTD4302-1G

For Reference Only

Part Number NTD4302-1G
PNEDA Part # NTD4302-1G
Description MOSFET N-CH 30V 8.4A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,562
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTD4302-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD4302-1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTD4302-1G, NTD4302-1G Datasheet (Total Pages: 7, Size: 138.4 KB)
PDFNTD4302G Datasheet Cover
NTD4302G Datasheet Page 2 NTD4302G Datasheet Page 3 NTD4302G Datasheet Page 4 NTD4302G Datasheet Page 5 NTD4302G Datasheet Page 6 NTD4302G Datasheet Page 7

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NTD4302-1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8.4A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs80nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2400pF @ 24V
FET Feature-
Power Dissipation (Max)1.04W (Ta), 75W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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