Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NTD24N06-1G

NTD24N06-1G

For Reference Only

Part Number NTD24N06-1G
PNEDA Part # NTD24N06-1G
Description MOSFET N-CH 60V 24A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,390
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 18 - Apr 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTD24N06-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD24N06-1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTD24N06-1G, NTD24N06-1G Datasheet (Total Pages: 8, Size: 144.62 KB)
PDFNTD24N06G Datasheet Cover
NTD24N06G Datasheet Page 2 NTD24N06G Datasheet Page 3 NTD24N06G Datasheet Page 4 NTD24N06G Datasheet Page 5 NTD24N06G Datasheet Page 6 NTD24N06G Datasheet Page 7 NTD24N06G Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NTD24N06-1G Datasheet
  • where to find NTD24N06-1G
  • ON Semiconductor

  • ON Semiconductor NTD24N06-1G
  • NTD24N06-1G PDF Datasheet
  • NTD24N06-1G Stock

  • NTD24N06-1G Pinout
  • Datasheet NTD24N06-1G
  • NTD24N06-1G Supplier

  • ON Semiconductor Distributor
  • NTD24N06-1G Price
  • NTD24N06-1G Distributor

NTD24N06-1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C24A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs42mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs48nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 25V
FET Feature-
Power Dissipation (Max)1.36W (Ta), 62.5W (Tj)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

The Products You May Be Interested In

SQ3418AEEV-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

7.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

35mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

370pF @ 15V

FET Feature

-

Power Dissipation (Max)

4W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6

APT30M70SVRG

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS V®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

70mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

225nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

5870pF @ 25V

FET Feature

-

Power Dissipation (Max)

370W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D3 [S]

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

FDMC86340ET80

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

14A (Ta), 68A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

49nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2775pF @ 40V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta), 65W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Power33

Package / Case

8-PowerWDFN

NDT452P

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

180mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

525pF @ 10V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

SOT-223-4

Package / Case

TO-261-4, TO-261AA

NTR4503NT3

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

110mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 24V

FET Feature

-

Power Dissipation (Max)

420mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

Recently Sold

2N7002LT1G

2N7002LT1G

ON Semiconductor

MOSFET N-CH 60V 0.115A SOT-23

CY62126EV30LL-45ZSXI

CY62126EV30LL-45ZSXI

Cypress Semiconductor

IC SRAM 1M PARALLEL 44TSOP II

NAND256W3A2BN6E

NAND256W3A2BN6E

Micron Technology Inc.

IC FLASH 256M PARALLEL 48TSOP

LM2904AQTH-13

LM2904AQTH-13

Diodes Incorporated

IC OPAMP GP 2 CIRCUIT 8TSSOP

AT25640AN-10SU-2.7

AT25640AN-10SU-2.7

Microchip Technology

IC EEPROM 64K SPI 20MHZ 8SOIC

NTJD4001NT1G

NTJD4001NT1G

ON Semiconductor

MOSFET 2N-CH 30V 0.25A SOT-363

OP2177ARMZ-REEL

OP2177ARMZ-REEL

Analog Devices

IC OPAMP GP 2 CIRCUIT 8MSOP

ASDMB-100.000MHZ-LY-T

ASDMB-100.000MHZ-LY-T

Abracon

MEMS OSC XO 100.0000MHZ LVCMOS

BAT54A-7-F

BAT54A-7-F

Diodes Incorporated

DIODE ARRAY SCHOTTKY 30V SOT23-3

TZB4R500AB10R00

TZB4R500AB10R00

Murata

CAP TRIMMER 7-50PF 50V SMD

LT1963AEST-1.8#PBF

LT1963AEST-1.8#PBF

Linear Technology/Analog Devices

IC REG LINEAR 1.8V 1.5A SOT223-3

74HC573D

74HC573D

Toshiba Semiconductor and Storage

IC LATCH OCTAL D 3ST 20SOIC