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NSVF2250WT1

NSVF2250WT1

For Reference Only

Part Number NSVF2250WT1
PNEDA Part # NSVF2250WT1
Description RF TRANS NPN 15V SC70-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,888
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSVF2250WT1 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNSVF2250WT1
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF

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NSVF2250WT1 Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)15V
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Gain-
Power - Max-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)50mA
Operating Temperature-
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackageSC-70-3 (SOT323)

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

10V

Frequency - Transition

8GHz

Noise Figure (dB Typ @ f)

1.3dB ~ 2dB @ 1GHz ~ 2GHz

Gain

-

Power - Max

365mW

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 5mA, 6V

Current - Collector (Ic) (Max)

100mA

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

TO-236AB (SOT23)

BFR 193W E6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

12V

Frequency - Transition

8GHz

Noise Figure (dB Typ @ f)

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

Gain

10.5dB ~ 16dB

Power - Max

580mW

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 30mA, 8V

Current - Collector (Ic) (Max)

80mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

PG-SOT323-3

HFA3134IHZ96

Renesas Electronics America Inc.

Manufacturer

Renesas Electronics America Inc.

Series

-

Transistor Type

2 NPN (Dual)

Voltage - Collector Emitter Breakdown (Max)

9V

Frequency - Transition

8.5GHz

Noise Figure (dB Typ @ f)

2.4dB @ 1GHz

Gain

-

Power - Max

-

DC Current Gain (hFE) (Min) @ Ic, Vce

48 @ 10mA, 2V

Current - Collector (Ic) (Max)

26mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6

Supplier Device Package

SOT-23-6

Manufacturer

CEL

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

10V

Frequency - Transition

7GHz

Noise Figure (dB Typ @ f)

1.5dB ~ 1.6dB @ 1GHz ~ 2GHz

Gain

9dB ~ 13.5dB

Power - Max

150mW

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 7mA, 3V

Current - Collector (Ic) (Max)

65mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

SOT-323

2N4957UB

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Transistor Type

PNP

Voltage - Collector Emitter Breakdown (Max)

30V

Frequency - Transition

-

Noise Figure (dB Typ @ f)

3.5dB @ 450MHz

Gain

25dB

Power - Max

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 5mA, 10V

Current - Collector (Ic) (Max)

30mA

Operating Temperature

-65°C ~ 200°C (TJ)

Mounting Type

Surface Mount

Package / Case

3-SMD, No Lead

Supplier Device Package

UB

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