NSS20601CF8T1G
For Reference Only
| Part Number | NSS20601CF8T1G |
| PNEDA Part # | NSS20601CF8T1G |
| Description | TRANS NPN 20V 6A 1206A CHIPFET |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,712 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 19 - Mar 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NSS20601CF8T1G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NSS20601CF8T1G |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
| Datasheet |
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NSS20601CF8T1G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 6A |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Vce Saturation (Max) @ Ib, Ic | 130mV @ 400mA, 4A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1A, 2V |
| Power - Max | 830mW |
| Frequency - Transition | 140MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Supplier Device Package | ChipFET™ |
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Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 150mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V Power - Max 150mW Frequency - Transition 80MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-723 Supplier Device Package VESM |
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