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NSBA124EDXV6T1G

NSBA124EDXV6T1G

For Reference Only

Part Number NSBA124EDXV6T1G
PNEDA Part # NSBA124EDXV6T1G
Description TRANS 2PNP PREBIAS 0.5W SOT563
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,142
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSBA124EDXV6T1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNSBA124EDXV6T1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
NSBA124EDXV6T1G, NSBA124EDXV6T1G Datasheet (Total Pages: 8, Size: 118.3 KB)
PDFMUN5112DW1T1G Datasheet Cover
MUN5112DW1T1G Datasheet Page 2 MUN5112DW1T1G Datasheet Page 3 MUN5112DW1T1G Datasheet Page 4 MUN5112DW1T1G Datasheet Page 5 MUN5112DW1T1G Datasheet Page 6 MUN5112DW1T1G Datasheet Page 7 MUN5112DW1T1G Datasheet Page 8

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NSBA124EDXV6T1G Specifications

ManufacturerON Semiconductor
Series-
Transistor Type2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)22kOhms
Resistor - Emitter Base (R2)22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max500mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563

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