Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

MUN5112DW1T1G Datasheet

MUN5112DW1T1G Datasheet
Total Pages: 8
Size: 118.3 KB
ON Semiconductor
This datasheet covers 4 part numbers: MUN5112DW1T1G, NSBA124EDXV6T1G, SMUN5112DW1T1G, NSBA124EDP6T5G
MUN5112DW1T1G Datasheet Page 1
MUN5112DW1T1G Datasheet Page 2
MUN5112DW1T1G Datasheet Page 3
MUN5112DW1T1G Datasheet Page 4
MUN5112DW1T1G Datasheet Page 5
MUN5112DW1T1G Datasheet Page 6
MUN5112DW1T1G Datasheet Page 7
MUN5112DW1T1G Datasheet Page 8
MUN5112DW1T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22kOhms

Resistor - Emitter Base (R2)

22kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-88/SC70-6/SOT-363

NSBA124EDXV6T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22kOhms

Resistor - Emitter Base (R2)

22kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

500mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SOT-563

SMUN5112DW1T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22kOhms

Resistor - Emitter Base (R2)

22kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-88/SC70-6/SOT-363

NSBA124EDP6T5G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22kOhms

Resistor - Emitter Base (R2)

22kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

408mW

Mounting Type

Surface Mount

Package / Case

SOT-963

Supplier Device Package

SOT-963