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NSBA123JDP6T5G

NSBA123JDP6T5G

For Reference Only

Part Number NSBA123JDP6T5G
PNEDA Part # NSBA123JDP6T5G
Description TRANS 2PNP PREBIAS 0.408W SOT963
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,806
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSBA123JDP6T5G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNSBA123JDP6T5G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
NSBA123JDP6T5G, NSBA123JDP6T5G Datasheet (Total Pages: 8, Size: 124.74 KB)
PDFNSBA123JDP6T5G Datasheet Cover
NSBA123JDP6T5G Datasheet Page 2 NSBA123JDP6T5G Datasheet Page 3 NSBA123JDP6T5G Datasheet Page 4 NSBA123JDP6T5G Datasheet Page 5 NSBA123JDP6T5G Datasheet Page 6 NSBA123JDP6T5G Datasheet Page 7 NSBA123JDP6T5G Datasheet Page 8

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NSBA123JDP6T5G Specifications

ManufacturerON Semiconductor
Series-
Transistor Type2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max408mW
Mounting TypeSurface Mount
Package / CaseSOT-963
Supplier Device PackageSOT-963

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