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NP82N04NUG-S18-AY

NP82N04NUG-S18-AY

For Reference Only

Part Number NP82N04NUG-S18-AY
PNEDA Part # NP82N04NUG-S18-AY
Description MOSFET N-CH 40V 82A TO-262
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 7,038
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NP82N04NUG-S18-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberNP82N04NUG-S18-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NP82N04NUG-S18-AY, NP82N04NUG-S18-AY Datasheet (Total Pages: 10, Size: 315.37 KB)
PDFNP82N04NUG-S18-AY Datasheet Cover
NP82N04NUG-S18-AY Datasheet Page 2 NP82N04NUG-S18-AY Datasheet Page 3 NP82N04NUG-S18-AY Datasheet Page 4 NP82N04NUG-S18-AY Datasheet Page 5 NP82N04NUG-S18-AY Datasheet Page 6 NP82N04NUG-S18-AY Datasheet Page 7 NP82N04NUG-S18-AY Datasheet Page 8 NP82N04NUG-S18-AY Datasheet Page 9 NP82N04NUG-S18-AY Datasheet Page 10

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NP82N04NUG-S18-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C82A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 41A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs160nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9750pF @ 25V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 143W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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