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NP82N04NUG-S18-AY Datasheet

NP82N04NUG-S18-AY Datasheet
Total Pages: 10
Size: 315.37 KB
Renesas Electronics America
This datasheet covers 1 part numbers: NP82N04NUG-S18-AY
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NP82N04NUG-S18-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

82A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.2mOhm @ 41A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

160nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9750pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta), 143W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA