Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NP35N04YUG-E1-AY

NP35N04YUG-E1-AY

For Reference Only

Part Number NP35N04YUG-E1-AY
PNEDA Part # NP35N04YUG-E1-AY
Description MOSFET N-CH 40V 35A 8HSON
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 2,538
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NP35N04YUG-E1-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberNP35N04YUG-E1-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NP35N04YUG-E1-AY, NP35N04YUG-E1-AY Datasheet (Total Pages: 8, Size: 224.06 KB)
PDFNP35N04YUG-E1-AY Datasheet Cover
NP35N04YUG-E1-AY Datasheet Page 2 NP35N04YUG-E1-AY Datasheet Page 3 NP35N04YUG-E1-AY Datasheet Page 4 NP35N04YUG-E1-AY Datasheet Page 5 NP35N04YUG-E1-AY Datasheet Page 6 NP35N04YUG-E1-AY Datasheet Page 7 NP35N04YUG-E1-AY Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NP35N04YUG-E1-AY Datasheet
  • where to find NP35N04YUG-E1-AY
  • Renesas Electronics America

  • Renesas Electronics America NP35N04YUG-E1-AY
  • NP35N04YUG-E1-AY PDF Datasheet
  • NP35N04YUG-E1-AY Stock

  • NP35N04YUG-E1-AY Pinout
  • Datasheet NP35N04YUG-E1-AY
  • NP35N04YUG-E1-AY Supplier

  • Renesas Electronics America Distributor
  • NP35N04YUG-E1-AY Price
  • NP35N04YUG-E1-AY Distributor

NP35N04YUG-E1-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs10mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs54nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2850pF @ 25V
FET Feature-
Power Dissipation (Max)1W (Ta), 77W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HSON
Package / Case8-SMD, Flat Lead Exposed Pad

The Products You May Be Interested In

CSD17585F5

Texas Instruments

Manufacturer

Series

FemtoFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

27mOhm @ 900mA, 10V

Vgs(th) (Max) @ Id

1.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.1nC @ 10V

Vgs (Max)

20V

Input Capacitance (Ciss) (Max) @ Vds

380pF @ 15V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-PICOSTAR

Package / Case

3-XFDFN

IXTC13N50

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

400mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id

4V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2800pF @ 25V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS220™

Package / Case

ISOPLUS220™

GP2M004A065HG

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.4Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

642pF @ 25V

FET Feature

-

Power Dissipation (Max)

98.4W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

SISS30LDN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

16A (Ta), 55.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2070pF @ 40V

FET Feature

-

Power Dissipation (Max)

4.8W (Ta), 57W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8S

Package / Case

PowerPAK® 1212-8S

Manufacturer

IXYS

Series

TrenchMV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

85V

Current - Continuous Drain (Id) @ 25°C

88A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

69nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3140pF @ 25V

FET Feature

-

Power Dissipation (Max)

230W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

AD826AR

AD826AR

Analog Devices

IC OPAMP VFB 2 CIRCUIT 8SOIC

STGW45HF60WDI

STGW45HF60WDI

STMicroelectronics

IGBT 600V 70A 250W TO247

VN10LP

VN10LP

Diodes Incorporated

MOSFET N-CH 60V 270MA TO92-3

ADN4662BRZ

ADN4662BRZ

Analog Devices

IC RECEIVER 0/1 8SOIC

PLA10AN3630R3D2B

PLA10AN3630R3D2B

Murata

COMMON MODE CHOKE 300MA 2LN TH

PIC18LF1320-I/P

PIC18LF1320-I/P

Microchip Technology

IC MCU 8BIT 8KB FLASH 18DIP

MX25L12835FM2I-10G

MX25L12835FM2I-10G

Macronix

IC FLASH 128M SPI 104MHZ 8SOP

AD8062ARZ

AD8062ARZ

Analog Devices

IC OPAMP VFB 2 CIRCUIT 8SOIC

MTFC8GACAAAM-4M IT

MTFC8GACAAAM-4M IT

Micron Technology Inc.

IC FLASH EMMC 64G

ADM1087AKSZ-REEL7

ADM1087AKSZ-REEL7

Analog Devices

IC SIMPLE SEQUENCER OD SC70-6

UCLAMP2804L.TCT

UCLAMP2804L.TCT

Semtech

TVS DIODE 2.8V 10V 8SOIC

EN6360QI

EN6360QI

Intel

DC DC CONVERTER 0.6-5.8V 46W