NP35N04YUG-E1-AY Datasheet
NP35N04YUG-E1-AY Datasheet
Total Pages: 8
Size: 224.06 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
NP35N04YUG-E1-AY
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 10mOhm @ 17.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2850pF @ 25V FET Feature - Power Dissipation (Max) 1W (Ta), 77W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HSON Package / Case 8-SMD, Flat Lead Exposed Pad |
