Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NP160N055TUJ-E1-AY

NP160N055TUJ-E1-AY

For Reference Only

Part Number NP160N055TUJ-E1-AY
PNEDA Part # NP160N055TUJ-E1-AY
Description MOSFET N-CH 55V 160A TO-263-7
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 7,254
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NP160N055TUJ-E1-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberNP160N055TUJ-E1-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NP160N055TUJ-E1-AY, NP160N055TUJ-E1-AY Datasheet (Total Pages: 8, Size: 208.97 KB)
PDFNP160N055TUJ-E2-AY Datasheet Cover
NP160N055TUJ-E2-AY Datasheet Page 2 NP160N055TUJ-E2-AY Datasheet Page 3 NP160N055TUJ-E2-AY Datasheet Page 4 NP160N055TUJ-E2-AY Datasheet Page 5 NP160N055TUJ-E2-AY Datasheet Page 6 NP160N055TUJ-E2-AY Datasheet Page 7 NP160N055TUJ-E2-AY Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NP160N055TUJ-E1-AY Datasheet
  • where to find NP160N055TUJ-E1-AY
  • Renesas Electronics America

  • Renesas Electronics America NP160N055TUJ-E1-AY
  • NP160N055TUJ-E1-AY PDF Datasheet
  • NP160N055TUJ-E1-AY Stock

  • NP160N055TUJ-E1-AY Pinout
  • Datasheet NP160N055TUJ-E1-AY
  • NP160N055TUJ-E1-AY Supplier

  • Renesas Electronics America Distributor
  • NP160N055TUJ-E1-AY Price
  • NP160N055TUJ-E1-AY Distributor

NP160N055TUJ-E1-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10350pF @ 25V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 250W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263-7
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

The Products You May Be Interested In

IRFU120ZPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

8.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 5.2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

310pF @ 25V

FET Feature

-

Power Dissipation (Max)

35W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK (TO-251)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

CPH6444-TL-W

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

4.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

78mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

505pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-CPH

Package / Case

SOT-23-6 Thin, TSOT-23-6

BSS123L7874XT

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

170mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6Ohm @ 170mA, 10V

Vgs(th) (Max) @ Id

1.8V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

2.67nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

69pF @ 25V

FET Feature

-

Power Dissipation (Max)

360mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

DMP3099L-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

65mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.2nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

563pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.08W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

DMN2015UFDF-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

15.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

9mOhm @ 8.5A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

42.3nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1439pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

U-DFN2020-6

Package / Case

6-UDFN Exposed Pad

Recently Sold

MAX11207EEE+T

MAX11207EEE+T

Maxim Integrated

IC ADC 20BIT SIGMA-DELTA 16QSOP

W25Q64DWSSIG

W25Q64DWSSIG

Winbond Electronics

IC FLASH 64M SPI 104MHZ 8SOIC

MAX3237EAI+T

MAX3237EAI+T

Maxim Integrated

IC TRANSCEIVER FULL 5/3 28SSOP

DMG4468LFG-7

DMG4468LFG-7

Diodes Incorporated

MOSFET N-CH 30V 7.62A DFN3030-8

PI3740-00-LGIZ

PI3740-00-LGIZ

Vicor

DC DC CONVERTER 10-50V

NLC453232T-150K-PF

NLC453232T-150K-PF

TDK

FIXED IND 15UH 450MA 700 MOHM

MSS1P4-M3/89A

MSS1P4-M3/89A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A MICROSMP

BSS123

BSS123

ON Semiconductor

MOSFET N-CH 100V 170MA SOT-23

SSM2305RMZ-R2

SSM2305RMZ-R2

Analog Devices

IC AMP AUDIO 2.8W MONO D 8MSOP

LT1167ACS8#PBF

LT1167ACS8#PBF

Linear Technology/Analog Devices

IC INST AMP 1 CIRCUIT 8SO

XC7Z020-1CLG400I

XC7Z020-1CLG400I

Xilinx

IC SOC CORTEX-A9 667MHZ 400BGA

MMSZ7V5T1G

MMSZ7V5T1G

ON Semiconductor

DIODE ZENER 7.5V 500MW SOD123