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SIHP18N50C-E3

SIHP18N50C-E3

For Reference Only

Part Number SIHP18N50C-E3
PNEDA Part # SIHP18N50C-E3
Description MOSFET N-CH 500V 18A TO220
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,784
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHP18N50C-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHP18N50C-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHP18N50C-E3, SIHP18N50C-E3 Datasheet (Total Pages: 9, Size: 322.61 KB)
PDFSIHP18N50C-E3 Datasheet Cover
SIHP18N50C-E3 Datasheet Page 2 SIHP18N50C-E3 Datasheet Page 3 SIHP18N50C-E3 Datasheet Page 4 SIHP18N50C-E3 Datasheet Page 5 SIHP18N50C-E3 Datasheet Page 6 SIHP18N50C-E3 Datasheet Page 7 SIHP18N50C-E3 Datasheet Page 8 SIHP18N50C-E3 Datasheet Page 9

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SIHP18N50C-E3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs270mOhm @ 10A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs76nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2942pF @ 25V
FET Feature-
Power Dissipation (Max)223W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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