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NP160N04TDG-E1-AY

NP160N04TDG-E1-AY

For Reference Only

Part Number NP160N04TDG-E1-AY
PNEDA Part # NP160N04TDG-E1-AY
Description MOSFET N-CH 40V 160A TO-263
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 8,352
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NP160N04TDG-E1-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberNP160N04TDG-E1-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NP160N04TDG-E1-AY, NP160N04TDG-E1-AY Datasheet (Total Pages: 10, Size: 367.08 KB)
PDFNP160N04TDG-E1-AY Datasheet Cover
NP160N04TDG-E1-AY Datasheet Page 2 NP160N04TDG-E1-AY Datasheet Page 3 NP160N04TDG-E1-AY Datasheet Page 4 NP160N04TDG-E1-AY Datasheet Page 5 NP160N04TDG-E1-AY Datasheet Page 6 NP160N04TDG-E1-AY Datasheet Page 7 NP160N04TDG-E1-AY Datasheet Page 8 NP160N04TDG-E1-AY Datasheet Page 9 NP160N04TDG-E1-AY Datasheet Page 10

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NP160N04TDG-E1-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C160A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs270nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds15750pF @ 25V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 220W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263-7
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

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