NP160N04TDG-E1-AY Datasheet
NP160N04TDG-E1-AY Datasheet
Total Pages: 10
Size: 367.08 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
NP160N04TDG-E1-AY
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 160A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2mOhm @ 80A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 15750pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta), 220W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263-7 Package / Case TO-263-7, D²Pak (6 Leads + Tab) |
