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NJX1675PDR2G

NJX1675PDR2G

For Reference Only

Part Number NJX1675PDR2G
PNEDA Part # NJX1675PDR2G
Description TRANS NPN/PNP 30V 3A 8SOIC
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,564
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Dec 20 - Dec 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NJX1675PDR2G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNJX1675PDR2G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays
Datasheet
NJX1675PDR2G, NJX1675PDR2G Datasheet (Total Pages: 8, Size: 381 KB)
PDFNJX1675PDR2G Datasheet Cover
NJX1675PDR2G Datasheet Page 2 NJX1675PDR2G Datasheet Page 3 NJX1675PDR2G Datasheet Page 4 NJX1675PDR2G Datasheet Page 5 NJX1675PDR2G Datasheet Page 6 NJX1675PDR2G Datasheet Page 7 NJX1675PDR2G Datasheet Page 8

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NJX1675PDR2G Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN, PNP
Current - Collector (Ic) (Max)3A
Voltage - Collector Emitter Breakdown (Max)30V
Vce Saturation (Max) @ Ib, Ic115mV @ 200mA, 2A, 170mV @ 200mA, 2A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 1A, 2V
Power - Max2W
Frequency - Transition100MHz, 120MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

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