Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NSVEMT1DXV6T1G

NSVEMT1DXV6T1G

For Reference Only

Part Number NSVEMT1DXV6T1G
PNEDA Part # NSVEMT1DXV6T1G
Description TRANS 2PNP 60V 0.1A SOT563
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,400
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSVEMT1DXV6T1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNSVEMT1DXV6T1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays
Datasheet
NSVEMT1DXV6T1G, NSVEMT1DXV6T1G Datasheet (Total Pages: 4, Size: 54.48 KB)
PDFEMT1DXV6T5 Datasheet Cover
EMT1DXV6T5 Datasheet Page 2 EMT1DXV6T5 Datasheet Page 3 EMT1DXV6T5 Datasheet Page 4

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NSVEMT1DXV6T1G Datasheet
  • where to find NSVEMT1DXV6T1G
  • ON Semiconductor

  • ON Semiconductor NSVEMT1DXV6T1G
  • NSVEMT1DXV6T1G PDF Datasheet
  • NSVEMT1DXV6T1G Stock

  • NSVEMT1DXV6T1G Pinout
  • Datasheet NSVEMT1DXV6T1G
  • NSVEMT1DXV6T1G Supplier

  • ON Semiconductor Distributor
  • NSVEMT1DXV6T1G Price
  • NSVEMT1DXV6T1G Distributor

NSVEMT1DXV6T1G Specifications

ManufacturerON Semiconductor
Series-
Transistor Type2 PNP (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)500pA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 6V
Power - Max500mW
Frequency - Transition140MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563

The Products You May Be Interested In

HN4A06J(TE85L,F)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

2 PNP (Dual) Matched Pair, Common Emitter

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

300mV @ 1mA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

200 @ 2mA, 6V

Power - Max

300mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SC-74A, SOT-753

Supplier Device Package

SMV

SN75468DE4

Texas Instruments

Manufacturer

Series

-

Transistor Type

7 NPN Darlington

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

100V

Vce Saturation (Max) @ Ib, Ic

1.6V @ 500µA, 350mA

Current - Collector Cutoff (Max)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

-

Power - Max

-

Frequency - Transition

-

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

16-SOIC (0.154", 3.90mm Width)

Supplier Device Package

16-SOIC

HN1C03FU-B,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

*

Transistor Type

-

Current - Collector (Ic) (Max)

-

Voltage - Collector Emitter Breakdown (Max)

-

Vce Saturation (Max) @ Ib, Ic

-

Current - Collector Cutoff (Max)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

-

Power - Max

-

Frequency - Transition

-

Operating Temperature

-

Mounting Type

-

Package / Case

-

Supplier Device Package

-

MPQ2222A

Central Semiconductor Corp

Manufacturer

Central Semiconductor Corp

Series

-

Transistor Type

4 NPN (Quad)

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

40V

Vce Saturation (Max) @ Ib, Ic

1V @ 50mA, 500mA

Current - Collector Cutoff (Max)

10nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 150mA, 10V

Power - Max

650mW

Frequency - Transition

200MHz

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

14-DIP (0.300", 7.62mm)

Supplier Device Package

TO-116

2N6990

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Transistor Type

4 NPN (Quad)

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

1V @ 50mA, 500mA

Current - Collector Cutoff (Max)

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 150mA, 10V

Power - Max

400mW

Frequency - Transition

-

Operating Temperature

-65°C ~ 200°C (TJ)

Mounting Type

Surface Mount

Package / Case

14-Flatpack

Supplier Device Package

14-Flatpack

Recently Sold

IXGX120N60B

IXGX120N60B

IXYS

IGBT 600V 200A 660W TO247

AUIRF2804S

AUIRF2804S

Infineon Technologies

MOSFET N-CH 40V 195A D2PAK

TAJB475K016RNJ

TAJB475K016RNJ

CAP TANT 4.7UF 10% 16V 1411

NE3509M04-A

NE3509M04-A

CEL

FET RF 4V 2GHZ 4-SMINI

ESD3V3D5B-TP

ESD3V3D5B-TP

Micro Commercial Co

TVS DIODE 3.3V 12V SOD523

IHLP2525CZERR47M01

IHLP2525CZERR47M01

Vishay Dale

FIXED IND 470NH 17.5A 4.2 MOHM

17-21SURC/S530-A3/TR8

17-21SURC/S530-A3/TR8

Everlight Electronics Co Ltd

LED RED CLEAR SMD

MAX97220AETE+

MAX97220AETE+

Maxim Integrated

IC AMP AUD.13W STER AB 16TQFN

AEDS-8011-A11

AEDS-8011-A11

Broadcom

ROTARY ENCODER OPTICAL 500PPR

AT25M01-SSHM-T

AT25M01-SSHM-T

Microchip Technology

IC EEPROM 1M SPI 20MHZ 8SOIC

MAX3051ESA+T

MAX3051ESA+T

Maxim Integrated

IC TRANSCEIVER HALF 1/1 8SO

AS5263-HQFM

AS5263-HQFM

ams

SENSOR ANGLE 360DEG SMD