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SGTB11N60R2DT4G

SGTB11N60R2DT4G

For Reference Only

Part Number SGTB11N60R2DT4G
PNEDA Part # SGTB11N60R2DT4G
Description RC2 IGBT 10A 600V DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,608
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 18 - Feb 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SGTB11N60R2DT4G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberSGTB11N60R2DT4G
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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SGTB11N60R2DT4G Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input Type-
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

100W

Switching Energy

500µJ (off)

Input Type

Standard

Gate Charge

32nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

6.8A

Current - Collector Pulsed (Icm)

27A

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 5A

Power - Max

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Switching Energy

140µJ (on), 120µJ (off)

Input Type

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Gate Charge

15nC

Td (on/off) @ 25°C

40ns/87ns

Test Condition

480V, 5A, 100Ohm, 15V

Reverse Recovery Time (trr)

28ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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ISL9V3036D3ST

ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

150W

Switching Energy

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Input Type

Logic

Gate Charge

17nC

Td (on/off) @ 25°C

-/4.8µs

Test Condition

300V, 1kOhm, 5V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

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STGWT30V60F

STMicroelectronics

Manufacturer

STMicroelectronics

Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

383µJ (on), 233µJ (off)

Input Type

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Gate Charge

163nC

Td (on/off) @ 25°C

45ns/189ns

Test Condition

400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3P

STGD7NB60KT4

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

14A

Current - Collector Pulsed (Icm)

56A

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 7A

Power - Max

70W

Switching Energy

95µJ (on), 140µJ (off)

Input Type

Standard

Gate Charge

32.7nC

Td (on/off) @ 25°C

15ns/50ns

Test Condition

480V, 7A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

DPAK

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