NGTD13T65F2WP Datasheet
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Manufacturer ON Semiconductor Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) - Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 30A Power - Max - Switching Energy - Input Type Standard Gate Charge - Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
Manufacturer ON Semiconductor Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) - Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 30A Power - Max - Switching Energy - Input Type Standard Gate Charge - Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
