NGTB30N120IHSWG Datasheet
NGTB30N120IHSWG Datasheet
Total Pages: 8
Size: 167.77 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
NGTB30N120IHSWG
|
Manufacturer ON Semiconductor Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 60A Current - Collector Pulsed (Icm) 200A Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A Power - Max 192W Switching Energy 1mJ (off) Input Type Standard Gate Charge 220nC Td (on/off) @ 25°C -/210ns Test Condition 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 |
