NGTB10N60R2DT4G Datasheet
NGTB10N60R2DT4G Datasheet
Total Pages: 7
Size: 619.86 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
NGTB10N60R2DT4G
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Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 20A Current - Collector Pulsed (Icm) 40A Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 10A Power - Max 72W Switching Energy 412µJ (on), 140µJ (off) Input Type Standard Gate Charge 53nC Td (on/off) @ 25°C 48ns/120ns Test Condition 300V, 10A, 30Ohm, 15V Reverse Recovery Time (trr) 90ns Operating Temperature 175°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package DPAK |
