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NE68118-A

NE68118-A

For Reference Only

Part Number NE68118-A
PNEDA Part # NE68118-A
Description RF TRANS NPN 10V 9GHZ SOT343
Manufacturer CEL
Unit Price Request a Quote
In Stock 2,736
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NE68118-A Resources

Brand CEL
ECAD Module ECAD
Mfr. Part NumberNE68118-A
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF
Datasheet
NE68118-A, NE68118-A Datasheet (Total Pages: 6, Size: 1,349.72 KB)
PDF2SC5012-A Datasheet Cover
2SC5012-A Datasheet Page 2 2SC5012-A Datasheet Page 3 2SC5012-A Datasheet Page 4 2SC5012-A Datasheet Page 5 2SC5012-A Datasheet Page 6

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NE68118-A Specifications

ManufacturerCEL
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)10V
Frequency - Transition9GHz
Noise Figure (dB Typ @ f)1.2dB @ 1GHz
Gain14dB
Power - Max150mW
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 20mA, 8V
Current - Collector (Ic) (Max)65mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-82A, SOT-343
Supplier Device PackageSOT-343

The Products You May Be Interested In

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

1.5dB ~ 2.5dB @ 2GHz

Gain

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Power - Max

125mW

DC Current Gain (hFE) (Min) @ Ic, Vce

75 @ 10mA, 3V

Current - Collector (Ic) (Max)

30mA

Operating Temperature

150°C (TJ)

Mounting Type

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AT-32033-TR1

Broadcom

Manufacturer

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Series

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Voltage - Collector Emitter Breakdown (Max)

5.5V

Frequency - Transition

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Noise Figure (dB Typ @ f)

1dB ~ 1.3dB @ 900MHz

Gain

11dB ~ 12.5dB

Power - Max

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 2mA, 2.7V

Current - Collector (Ic) (Max)

32mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23

MDS60L

Microsemi

Manufacturer

Microsemi Corporation

Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

65V

Frequency - Transition

1.03GHz ~ 1.09GHz

Noise Figure (dB Typ @ f)

-

Gain

10dB

Power - Max

120W

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 500mA, 5V

Current - Collector (Ic) (Max)

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Operating Temperature

200°C (TJ)

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BFU590QX

NXP

Manufacturer

NXP USA Inc.

Series

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Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

8GHz

Noise Figure (dB Typ @ f)

-

Gain

6.5dB

Power - Max

2W

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 80mA, 8V

Current - Collector (Ic) (Max)

200mA

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

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PN3563_D74Z

ON Semiconductor

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

14dB ~ 26dB

Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 8mA, 10V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

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