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NE52418-T1-A

NE52418-T1-A

For Reference Only

Part Number NE52418-T1-A
PNEDA Part # NE52418-T1-A
Description RF TRANS NPN 5V 4-SMINI MOLD
Manufacturer CEL
Unit Price Request a Quote
In Stock 8,568
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NE52418-T1-A Resources

Brand CEL
ECAD Module ECAD
Mfr. Part NumberNE52418-T1-A
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF
Datasheet
NE52418-T1-A, NE52418-T1-A Datasheet (Total Pages: 6, Size: 196 KB)
PDFNE52418-T1-A Datasheet Cover
NE52418-T1-A Datasheet Page 2 NE52418-T1-A Datasheet Page 3 NE52418-T1-A Datasheet Page 4 NE52418-T1-A Datasheet Page 5 NE52418-T1-A Datasheet Page 6

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NE52418-T1-A Specifications

ManufacturerCEL
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)5V
Frequency - Transition-
Noise Figure (dB Typ @ f)1dB ~ 1.5dB @ 2GHz
Gain14dB ~ 16dB
Power - Max150mW
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 3mA, 2V
Current - Collector (Ic) (Max)40mA
Operating Temperature125°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-82A, SOT-343
Supplier Device Package4-Super Mini Mold

The Products You May Be Interested In

Manufacturer

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

1.8dB @ 2GHz

Gain

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Power - Max

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 10mA, 6V

Current - Collector (Ic) (Max)

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Operating Temperature

150°C (TJ)

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Supplier Device Package

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ON Semiconductor

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Series

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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Power - Max

225mW

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 1mA, 6V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3

Manufacturer

CEL

Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

3.3V

Frequency - Transition

15GHz

Noise Figure (dB Typ @ f)

1.2dB @ 2GHz

Gain

14dB

Power - Max

190mW

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 10mA, 2V

Current - Collector (Ic) (Max)

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Operating Temperature

150°C (TJ)

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AT-30511-TR1G

Broadcom

Manufacturer

Broadcom Limited

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

5.5V

Frequency - Transition

-

Noise Figure (dB Typ @ f)

1.1dB ~ 1.4dB @ 900MHz

Gain

14dB ~ 16dB

Power - Max

100mW

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 1mA, 2.7V

Current - Collector (Ic) (Max)

8mA

Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

TO-253-4, TO-253AA

Supplier Device Package

SOT-143

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

2 NPN (Dual)

Voltage - Collector Emitter Breakdown (Max)

8V

Frequency - Transition

9GHz

Noise Figure (dB Typ @ f)

1.1dB ~ 1.9dB @ 900MHz ~ 2GHz

Gain

-

Power - Max

500mW

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 5mA, 6V

Current - Collector (Ic) (Max)

18mA

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

6-TSSOP

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