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2SC5754-T2-A

2SC5754-T2-A

For Reference Only

Part Number 2SC5754-T2-A
PNEDA Part # 2SC5754-T2-A
Description RF TRANS NPN 5V 20GHZ SOT343F
Manufacturer CEL
Unit Price Request a Quote
In Stock 7,920
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2SC5754-T2-A Resources

Brand CEL
ECAD Module ECAD
Mfr. Part Number2SC5754-T2-A
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF
Datasheet
2SC5754-T2-A, 2SC5754-T2-A Datasheet (Total Pages: 12, Size: 2,260.58 KB)
PDF2SC5754-A Datasheet Cover
2SC5754-A Datasheet Page 2 2SC5754-A Datasheet Page 3 2SC5754-A Datasheet Page 4 2SC5754-A Datasheet Page 5 2SC5754-A Datasheet Page 6 2SC5754-A Datasheet Page 7 2SC5754-A Datasheet Page 8 2SC5754-A Datasheet Page 9 2SC5754-A Datasheet Page 10 2SC5754-A Datasheet Page 11

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2SC5754-T2-A Specifications

ManufacturerCEL
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)5V
Frequency - Transition20GHz
Noise Figure (dB Typ @ f)-
Gain6.5dB
Power - Max735mW
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 100mA, 3V
Current - Collector (Ic) (Max)500mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-343F
Supplier Device PackageSOT-343F

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Series

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

25 @ 2mA, 1V

Current - Collector (Ic) (Max)

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Operating Temperature

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Manufacturer

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

4.7V

Frequency - Transition

46GHz

Noise Figure (dB Typ @ f)

0.55dB ~ 1.7dB @ 150MHz ~ 10GHz

Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

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NXP

Manufacturer

NXP USA Inc.

Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Toshiba Semiconductor and Storage

Manufacturer

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

26.5GHz

Noise Figure (dB Typ @ f)

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Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

50mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SC-82A, SOT-343

Supplier Device Package

USQ

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