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NDD60N550U1-1G

NDD60N550U1-1G

For Reference Only

Part Number NDD60N550U1-1G
PNEDA Part # NDD60N550U1-1G
Description MOSFET N-CH 600V 8.2A IPAK-4
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,382
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NDD60N550U1-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNDD60N550U1-1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NDD60N550U1-1G, NDD60N550U1-1G Datasheet (Total Pages: 8, Size: 133.36 KB)
PDFNDD60N550U1-35G Datasheet Cover
NDD60N550U1-35G Datasheet Page 2 NDD60N550U1-35G Datasheet Page 3 NDD60N550U1-35G Datasheet Page 4 NDD60N550U1-35G Datasheet Page 5 NDD60N550U1-35G Datasheet Page 6 NDD60N550U1-35G Datasheet Page 7 NDD60N550U1-35G Datasheet Page 8

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NDD60N550U1-1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C8.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs550mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds540pF @ 50V
FET Feature-
Power Dissipation (Max)94W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageIPAK (TO-251)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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