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N0412N-S19-AY

N0412N-S19-AY

For Reference Only

Part Number N0412N-S19-AY
PNEDA Part # N0412N-S19-AY
Description MOSFET N-CH 40V 100A TO-220
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 6,840
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

N0412N-S19-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberN0412N-S19-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
N0412N-S19-AY, N0412N-S19-AY Datasheet (Total Pages: 8, Size: 210.12 KB)
PDFN0412N-S19-AY Datasheet Cover
N0412N-S19-AY Datasheet Page 2 N0412N-S19-AY Datasheet Page 3 N0412N-S19-AY Datasheet Page 4 N0412N-S19-AY Datasheet Page 5 N0412N-S19-AY Datasheet Page 6 N0412N-S19-AY Datasheet Page 7 N0412N-S19-AY Datasheet Page 8

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N0412N-S19-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5550pF @ 25V
FET Feature-
Power Dissipation (Max)1.5W (Ta), 119W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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