N0412N-S19-AY Datasheet
N0412N-S19-AY Datasheet
Total Pages: 8
Size: 210.12 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
N0412N-S19-AY
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 100A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.7mOhm @ 50A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5550pF @ 25V FET Feature - Power Dissipation (Max) 1.5W (Ta), 119W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
