Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

N0301P-T1-AT

N0301P-T1-AT

For Reference Only

Part Number N0301P-T1-AT
PNEDA Part # N0301P-T1-AT
Description TRANSISTOR
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 5,886
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 17 - Nov 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

N0301P-T1-AT Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberN0301P-T1-AT
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
N0301P-T1-AT, N0301P-T1-AT Datasheet (Total Pages: 8, Size: 253.94 KB)
PDFN0301P-T1-AT Datasheet Cover
N0301P-T1-AT Datasheet Page 2 N0301P-T1-AT Datasheet Page 3 N0301P-T1-AT Datasheet Page 4 N0301P-T1-AT Datasheet Page 5 N0301P-T1-AT Datasheet Page 6 N0301P-T1-AT Datasheet Page 7 N0301P-T1-AT Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • N0301P-T1-AT Datasheet
  • where to find N0301P-T1-AT
  • Renesas Electronics America

  • Renesas Electronics America N0301P-T1-AT
  • N0301P-T1-AT PDF Datasheet
  • N0301P-T1-AT Stock

  • N0301P-T1-AT Pinout
  • Datasheet N0301P-T1-AT
  • N0301P-T1-AT Supplier

  • Renesas Electronics America Distributor
  • N0301P-T1-AT Price
  • N0301P-T1-AT Distributor

N0301P-T1-AT Specifications

ManufacturerRenesas Electronics America
Series-
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

The Products You May Be Interested In

SIHG100N60E-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

E

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1851pF @ 100V

FET Feature

-

Power Dissipation (Max)

208W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AC

Package / Case

TO-247-3

STP6NC60

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 3A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

45.5nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1020pF @ 25V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

FQD17P06TF

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

135mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

900pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 44W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRFIBC20GPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

1.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.4Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 25V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3 Full Pack, Isolated Tab

IRFP4004PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

195A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.7mOhm @ 195A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

330nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8920pF @ 25V

FET Feature

-

Power Dissipation (Max)

380W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AC

Package / Case

TO-247-3

Recently Sold

MAX3162EAI

MAX3162EAI

Maxim Integrated

IC TRANSCEIVER FULL 2/2 28SSOP

UUX1E470MCL1GS

UUX1E470MCL1GS

Nichicon

CAP ALUM 47UF 20% 25V SMD

MAX4162ESA+

MAX4162ESA+

Maxim Integrated

IC OPAMP GP 1 CIRCUIT 8SOIC

MC14066BDR2G

MC14066BDR2G

ON Semiconductor

IC MULTIPLEXER QUAD 4X1 14SOIC

MT25QU256ABA8ESF-0SIT

MT25QU256ABA8ESF-0SIT

Micron Technology Inc.

IC FLASH 256M SPI 133MHZ 16SOP2

RB751S40

RB751S40

ON Semiconductor

DIODE SCHOTTKY 40V 30MA SOD523F

SMBJ33CA-13-F

SMBJ33CA-13-F

Diodes Incorporated

TVS DIODE 33V 53.3V SMB

NTS0104BQ,115

NTS0104BQ,115

NXP

IC TRNSLTR BIDIR 14DHVQFN

SMLVT3V3

SMLVT3V3

STMicroelectronics

TVS DIODE 3.3V 10.3V SMB

ARF444

ARF444

Microsemi

PWR MOSFET RF N-CH 900V TO-247AD

16SVPF180M

16SVPF180M

Panasonic Electronic Components

CAP ALUM POLY 180UF 20% 16V SMD

MPX5010DP

MPX5010DP

NXP

SENSOR DIFF PRESS 1.45 PSI MAX