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IRFD224PBF

IRFD224PBF

For Reference Only

Part Number IRFD224PBF
PNEDA Part # IRFD224PBF
Description MOSFET N-CH 250V 630MA 4-DIP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 23,130
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFD224PBF Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFD224PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFD224PBF, IRFD224PBF Datasheet (Total Pages: 9, Size: 1,241.03 KB)
PDFIRFD224 Datasheet Cover
IRFD224 Datasheet Page 2 IRFD224 Datasheet Page 3 IRFD224 Datasheet Page 4 IRFD224 Datasheet Page 5 IRFD224 Datasheet Page 6 IRFD224 Datasheet Page 7 IRFD224 Datasheet Page 8 IRFD224 Datasheet Page 9

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IRFD224PBF Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C630mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.1Ohm @ 380mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds260pF @ 25V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package4-DIP, Hexdip, HVMDIP
Package / Case4-DIP (0.300", 7.62mm)

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