MURT20010R
For Reference Only
| Part Number | MURT20010R |
| PNEDA Part # | MURT20010R |
| Description | DIODE MODULE 100V 200A 3TOWER |
| Manufacturer | GeneSiC Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,230 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 30 - Apr 4 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MURT20010R Resources
| Brand | GeneSiC Semiconductor |
| ECAD Module |
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| Mfr. Part Number | MURT20010R |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Arrays |
| Datasheet |
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- If you have special order instructions,please note it on the ordering pages.
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- Orders cannot be canceled after shipping the packages.
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MURT20010R Specifications
| Manufacturer | GeneSiC Semiconductor |
| Series | - |
| Diode Configuration | 1 Pair Common Anode |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) (per Diode) | 200A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.3V @ 100A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75ns |
| Current - Reverse Leakage @ Vr | 25µA @ 50V |
| Operating Temperature - Junction | - |
| Mounting Type | Chassis Mount |
| Package / Case | Three Tower |
| Supplier Device Package | Three Tower |
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