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MURT20020R Datasheet

MURT20020R Datasheet
Total Pages: 3
Size: 724.79 KB
GeneSiC Semiconductor
This datasheet covers 6 part numbers: MURT20020R, MURT20020, MURT20010R, MURT20010, MURT20005R, MURT20005
MURT20020R Datasheet Page 1
MURT20020R Datasheet Page 2
MURT20020R Datasheet Page 3
MURT20020R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

200V

Current - Average Rectified (Io) (per Diode)

200A (DC)

Voltage - Forward (Vf) (Max) @ If

1.3V @ 100A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

75ns

Current - Reverse Leakage @ Vr

25µA @ 50V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MURT20020

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

200V

Current - Average Rectified (Io) (per Diode)

200A (DC)

Voltage - Forward (Vf) (Max) @ If

1.3V @ 100A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

75ns

Current - Reverse Leakage @ Vr

25µA @ 50V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MURT20010R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io) (per Diode)

200A (DC)

Voltage - Forward (Vf) (Max) @ If

1.3V @ 100A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

75ns

Current - Reverse Leakage @ Vr

25µA @ 50V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MURT20010

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io) (per Diode)

200A (DC)

Voltage - Forward (Vf) (Max) @ If

1.3V @ 100A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

75ns

Current - Reverse Leakage @ Vr

25µA @ 50V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MURT20005R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

50V

Current - Average Rectified (Io) (per Diode)

200A (DC)

Voltage - Forward (Vf) (Max) @ If

1.3V @ 100A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

75ns

Current - Reverse Leakage @ Vr

25µA @ 50V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MURT20005

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

50V

Current - Average Rectified (Io) (per Diode)

200A (DC)

Voltage - Forward (Vf) (Max) @ If

1.3V @ 100A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

75ns

Current - Reverse Leakage @ Vr

25µA @ 50V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower