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MS2356A

MS2356A

For Reference Only

Part Number MS2356A
PNEDA Part # MS2356A
Description RF POWER TRANSISTOR
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 3,168
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MS2356A Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberMS2356A
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF

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MS2356A Specifications

ManufacturerMicrosemi Corporation
Series-
Transistor Type-
Voltage - Collector Emitter Breakdown (Max)-
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Gain-
Power - Max-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

The Products You May Be Interested In

1214-150L

Microsemi

Manufacturer

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Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

65V

Frequency - Transition

1.2GHz ~ 1.4GHz

Noise Figure (dB Typ @ f)

-

Gain

7.15dB ~ 8.7dB

Power - Max

320W

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 1A, 5V

Current - Collector (Ic) (Max)

15A

Operating Temperature

200°C (TJ)

Mounting Type

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Package / Case

55ST-1

Supplier Device Package

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AT-64000-GP4

Broadcom

Manufacturer

Broadcom Limited

Series

-

Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

20V

Frequency - Transition

-

Noise Figure (dB Typ @ f)

-

Gain

-

Power - Max

3W

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 110mA, 8V

Current - Collector (Ic) (Max)

200mA

Operating Temperature

200°C (TJ)

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

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2N5770_D27Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

15V

Frequency - Transition

-

Noise Figure (dB Typ @ f)

6dB @ 60MHz

Gain

15dB

Power - Max

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 8mA, 10V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2SC4215-Y(TE85L,F)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

30V

Frequency - Transition

550MHz

Noise Figure (dB Typ @ f)

2dB ~ 5dB @ 100MHz

Gain

17dB ~ 23dB

Power - Max

100mW

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1mA, 6V

Current - Collector (Ic) (Max)

20mA

Operating Temperature

125°C (TJ)

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

USM

2SC4774T106S

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

6V

Frequency - Transition

800MHz

Noise Figure (dB Typ @ f)

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Gain

-

Power - Max

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce

180 @ 5mA, 5V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

UMT3

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