MRF5812GR1
For Reference Only
| Part Number | MRF5812GR1 |
| PNEDA Part # | MRF5812GR1 |
| Description | RF TRANS NPN 15V 5GHZ 8SO |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 3,186 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 30 - Dec 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MRF5812GR1 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | MRF5812GR1 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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MRF5812GR1 Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Frequency - Transition | 5GHz |
| Noise Figure (dB Typ @ f) | 2dB ~ 3dB @ 500MHz |
| Gain | 13dB ~ 15.5dB |
| Power - Max | 1.25W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 5V |
| Current - Collector (Ic) (Max) | 200mA |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
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Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 4.7V Frequency - Transition 45GHz Noise Figure (dB Typ @ f) 0.4dB ~ 1dB @ 150MHz ~ 10GHz Gain 10.5dB ~ 28dB Power - Max 100mW DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 13mA, 3V Current - Collector (Ic) (Max) 25mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 4-SMD, Flat Leads Supplier Device Package 4-TSFP |
Manufacturer Renesas Electronics America Inc. Series - Transistor Type 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max) 9V Frequency - Transition 8.5GHz Noise Figure (dB Typ @ f) 2.4dB @ 1GHz Gain - Power - Max - DC Current Gain (hFE) (Min) @ Ic, Vce 48 @ 10mA, 2V Current - Collector (Ic) (Max) 26mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Supplier Device Package SOT-23-6 |
Manufacturer CEL Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 3V Frequency - Transition 14GHz Noise Figure (dB Typ @ f) 1.3dB ~ 2dB @ 2GHz Gain - Power - Max 90mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 20mA, 2V Current - Collector (Ic) (Max) 30mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-623F Supplier Device Package 3-SuperMiniMold (M03) |
Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 7.5GHz Noise Figure (dB Typ @ f) 2.3dB ~ 2.9dB @ 2GHz Gain 12.5dB ~ 13.5dB Power - Max 580mW DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 30mA, 8V Current - Collector (Ic) (Max) 80mA Operating Temperature 200°C (TJ) Mounting Type Surface Mount Package / Case MICRO-X1 Supplier Device Package MICRO-X1 |
