JAN2N3636L
For Reference Only
Part Number | JAN2N3636L |
PNEDA Part # | JAN2N3636L |
Description | TRANS PNP 175V 1A |
Manufacturer | Microsemi |
Unit Price | Request a Quote |
In Stock | 3,096 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 25 - Nov 30 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
JAN2N3636L Resources
Brand | Microsemi |
ECAD Module | |
Mfr. Part Number | JAN2N3636L |
Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- JAN2N3636L Datasheet
- where to find JAN2N3636L
- Microsemi
- Microsemi JAN2N3636L
- JAN2N3636L PDF Datasheet
- JAN2N3636L Stock
- JAN2N3636L Pinout
- Datasheet JAN2N3636L
- JAN2N3636L Supplier
- Microsemi Distributor
- JAN2N3636L Price
- JAN2N3636L Distributor
JAN2N3636L Specifications
Manufacturer | Microsemi Corporation |
Series | Military, MIL-PRF-19500/357 |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 175V |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 10V |
Power - Max | 1W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-205AA, TO-5-3 Metal Can |
Supplier Device Package | TO-5 |
The Products You May Be Interested In
Panasonic Electronic Components Manufacturer Panasonic Electronic Components Series - Transistor Type NPN Current - Collector (Ic) (Max) 20mA Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 200mV @ 1mA, 10mA Current - Collector Cutoff (Max) 1μA DC Current Gain (hFE) (Min) @ Ic, Vce 600 @ 2mA, 10V Power - Max 200mW Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package Mini3-G1 |
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 700mA Voltage - Collector Emitter Breakdown (Max) 140V Vce Saturation (Max) @ Ib, Ic 700mV @ 20mA, 200mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 50mA, 2V Power - Max 800mW Frequency - Transition 50MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) - Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max) - DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 10V Power - Max - Frequency - Transition 100MHz Operating Temperature - Mounting Type Through Hole Package / Case TO-205AA, TO-5-3 Metal Can Supplier Device Package TO-5 |
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A Current - Collector Cutoff (Max) 100µA DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA, 1V Power - Max 36W Frequency - Transition 3MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-225AA, TO-126-3 Supplier Device Package TO-126-3 |
Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 600V Vce Saturation (Max) @ Ib, Ic 1V @ 500mA, 20mA Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 20mA, 5V Power - Max 900mW Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92MOD |